Lateral epitaxial overgrowth of ZnO in water at 90°C

被引：135

作者：

Andeen, D ^{[1
]}

Kim, JH

Lange, FF

Goh, GKL

Tripathy, S

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

来源：

ADVANCED FUNCTIONAL MATERIALS | 2006年 / 16卷 / 06期

关键词：

D O I：

10.1002/adfm.200500817

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Lateral epitaxial overgrowth (LEO) of ZnO has been demonstrated in water at 90 degrees C. The process starts with hydrothermal epitaxial growth of ZnO(0001) on MgAl2O4(111), followed by channel stamping of photoresist to define "growth windows". LEO films grow in zinc-precursor solutions at pH 10.9; sodium citrate addition controls out-of-plane growth. Transmission electron microscopy indicates threading dislocation reductions from similar to 2 x 10(10) to < 2 x 10(8) cm(-2) from the window to the wing regions. Microphotolurninescence and Hall-effect measurements indicate improved material quality. Wing tilt was observed. Double LEO demonstrates the possibility of complete dislocation reduction.

引用

页码：799 / 804

页数：6

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