The influence of defects on the cellular open circuit voltage in CuInGaSe2 thin film solar modules-An illuminated lock-in thermography study

被引：23

作者：

Adams, J. ^{[1
]}

Vetter, A. ^{[1
]}

Hoga, F. ^{[1
]}

Fecher, F. ^{[1
]}

Theisen, J. P. ^{[2
]}

Brabec, C. J. ^{[1
,3
]}

Buerhop-Lutz, C. ^{[1
]}

机构：

[1] Bavarian Ctr Appl Energy Res ZAE Bayern, D-91058 Erlangen, Germany

[2] Manz CIGS Technol GmbH, D-74523 Schwabisch Hall, Germany

[3] Univ Erlangen Nurnberg, Inst Mat Elect & Energy I MEET, D-91058 Erlangen, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2014年 / 123卷

关键词：

ILIT; Cell voltage; Open circuit; V-oc; Defect; Lock-in thermography; POWER LOSSES; CIS SOLAR; CELLS; SHUNTS;

D O I：

10.1016/j.solmat.2014.01.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuInGaSe2 (CIGS) thin film solar modules, despite their high efficiency, may contain three different kinds of macroscopic defects referred to as bulk defects, interface defects and interconnect defects. This occurs due to film's sensitivity to inhomogeneities during the manufacturing process. The result is a decrease of electrical power output from a cell or module. In this paper, we present the influence of macroscopic defects on the electrical behavior of CIGS thin film solar cells. To accomplish this, we investigated the relation between the IR-signal emitted of a defect in a cell (measured using illuminated lock-in thermography ILIT) and the respective open circuit cell voltage (V-oc,V-cell) under low light conditions ( < 100 W/m(2)). Furthermore, we developed a modified masking method of measuring V-oc,V-cell of a single cell within a thin film solar module. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：159 / 165

页数：7

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