On the detection of shunts in silicon solar cells by photo- and electroluminescence imaging

被引：112

作者：

Breitenstein, Otwin ^{[1
]}

Bauer, Jan ^{[1
]}

Trupke, Thorsten ^{[2
]}

Bardos, Robert A. ^{[2
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Univ New S Wales, Ctr Excellence Adv Silicon Photovolta & Photon, Sydney, NSW 2052, Australia

来源：

PROGRESS IN PHOTOVOLTAICS | 2008年 / 16卷 / 04期

关键词：

silicon solar cells; shunt investigation; lock-in thermography; electroluminescence; photoluminescence;

D O I：

10.1002/pip.803

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Recently electroluminescence (EL) and photoluminescence (PL) imaging were reported to allow detection of strong ohmic shunts in silicon solar cells. Comparing lock-in thermography (LIT) images with luminescence images of various shunted cells, measured under different conditions, the ability of luminescence techniques for shunt detection is investigated. Luminescence imaging allows identifying ohmic shunts only if they reach a certain strength. The detection limit for PL measurements of linear shunts was estimated to be in the order of 15 mA at 0.5 V bias for a point-like shunt in multicrystalline (mc) cells. Pre-breakdown sites can also be detected by electroluminescence under reverse bias. Copyright (C) 2007 John Wiley & Sons, Ltd.

引用

页码：325 / 330

页数：6

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