Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale production MOCVD reactors

被引：1

作者：

Tran, CA ^{[1
]}

Karlicek, RF ^{[1
]}

Brown, MG ^{[1
]}

Eliashevich, I ^{[1
]}

Gurary, A ^{[1
]}

Stall, R ^{[1
]}

机构：

[1] EMCORE Corp, Somerset, NJ 08807 USA

来源：

LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III | 1999年 / 3621卷

关键词：

D O I：

10.1117/12.344487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As more advances are made in the performance of GaN-based devices, a trend toward the use of large scale MOCVD reactors for epitaxial growth of GaN-based device structures is clear. In this paper we describe the use of Emcore's SpectraBlue(TM) reactor for large-scale manufacturing of Blue and Green LEDs. The high throughput growth of GaN based LEDs is demonstrated without compromising LED uniformity or overall performance. In-situ control of key parameters critical to the production of high quality LEDs, such as buffer layer growth is now feasible using in-situ reflectance spectroscopy. Film properties as well as LED device performance are discussed.

引用

页码：43 / 49

页数：7

共 6 条

[1] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].