HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES

High-power blue and violet light-emitting diodes (LEDs) based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single-quantum-well-structure was used. The violet LEDs produced 5.6 mW at 20 mA, with a sharp peak of light output at 405 nm, and exhibited an external quantum efficiency of 9.2%. The blue LEDs produced 4.8 mW at 20 mA and sharply peaked at 450 nm, corresponding to an external quantum efficiency of 8.7%, These values of the output power and the quantum efficiencies are the highest ever reported for violet and blue LEDs. (C) 1995 American Institute of Physics.