HIGH-QUALITY INGAN FILMS GROWN ON GAN FILMS

被引：212

作者：

NAKAMURA, S

MUKAI, T

机构：

[1] Department of Research and Development, Nichia Chemical Industries Ltd, Anan, Tokushima

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10B期

关键词：

INGAN; GAN; X-RAY ROCKING CURVE; BAND-EDGE EMISSION; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.31.L1457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN films were grown on GaN films with a high indium source flow rate and high growth temperatures between 780-degrees-C and 830-degrees-C. Strong and sharp band-edge (BE) emissions between 400 nm and 445 nm were observed, while deep-level emissions were barely observed in photoluminescence (PL) measurements at room temperature. The full width at half-maximum (FWHM) of the BE emissions was about 70 meV. The FWHM of the double-crystal X-ray rocking curve (XRC) from the InGaN films was about 8 minutes. This value of FWHM was the smallest one ever reported for InGaN films, and was almost the same as that of the GaN films which were used as the substrate.

引用

页码：L1457 / L1459

页数：3

共 14 条

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