Quantum resistance metrology in graphene

被引：66

作者：

Giesbers, A. J. M. ^{[1
]}

Rietveld, G. ^{[2
]}

Houtzager, E. ^{[2
]}

Zeitler, U. ^{[1
]}

Yang, R. ^{[3
]}

Novoselov, K. S. ^{[3
]}

Geim, A. K. ^{[3
]}

Maan, J. C. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Inst Mol & Mat, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands

[2] NMi Van Swinden Lab BV, NL-2629 JA Delft, Netherlands

[3] Univ Manchester, Dept Phys, Manchester M13 9PL, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

carbon; contact resistance; nanostructured materials; quantum Hall effect;

D O I：

10.1063/1.3043426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed a metrological characterization of the quantum Hall resistance in a 1 mu m wide graphene Hall bar. The longitudinal resistivity in the center of the nu=+/- 2 quantum Hall plateaus vanishes within the measurement noise of 20 m Omega up to 2 mu A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 mu A current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

引用

页数：3

共 17 条

[1] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[2] Revised technical guidelines for reliable dc measurements of the quantized Hall resistance [J].

Delahaye, F ;

Jeckelmann, B .

METROLOGIA, 2003, 40 (05) :217-223

[3] Electronic transport and the localization length in the quantum Hall effect [J].

Furlan, M .

PHYSICAL REVIEW B, 1998, 57 (23) :14818-14828

[4] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[5] Quantum-hall activation gaps in graphene [J].

Giesbers, A. J. M. ;

Zeitler, U. ;

Katsnelson, M. I. ;

Ponomarenko, L. A. ;

Mohiuddin, T. M. ;

Maan, J. C. .

PHYSICAL REVIEW LETTERS, 2007, 99 (20)

[6] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

[7] MODEL FOR A QUANTUM HALL-EFFECT WITHOUT LANDAU-LEVELS - CONDENSED-MATTER REALIZATION OF THE PARITY ANOMALY [J].

HALDANE, FDM .

PHYSICAL REVIEW LETTERS, 1988, 61 (18) :2015-2018

[8] The quantum Hall effect as an electrical resistance standard [J].

Jeckelmann, B ;

Jeanneret, B .

REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (12) :1603-1655

[9] Cryogenic current comparator bridge for quantum Hall resistance ratio measurements [J].

Kleinschmidt, P ;

Williams, JM ;

Fletcher, NE ;

Janssen, TJBM .

IEE PROCEEDINGS-SCIENCE MEASUREMENT AND TECHNOLOGY, 2002, 149 (06) :302-304

[10] Contact and edge effects in graphene devices [J].

Lee, Eduardo J. H. ;

Balasubramanian, Kannan ;

Weitz, Ralf Thomas ;

Burghard, Marko ;

Kern, Klaus .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :486-490

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