Development of lead zirconate titanate family thick films on various substrates

被引:41
作者
Akiyama, Y [1 ]
Yamanaka, K [1 ]
Fujisawa, E [1 ]
Kowata, Y [1 ]
机构
[1] RICOH Co Ltd, Res & Dev Grp, Tuzuki Ku, Yokohama, Kanagawa 2240035, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9B期
关键词
piezoelectric ceramic; thick film; actuator; micromachine; low-temperature sintering; screen printing;
D O I
10.1143/JJAP.38.5524
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a POS (Piezo on Silicon) actuator, which comprise piezoelectric materials on a silicon substrate, and the actuation mechanism uses a bending vibration of a unimorph structure. Realization of this device was attempted, and the low-temperature sintering of piezoelectric ceramics, optimization of the screen-printing method and the barrier layer on a silicon substrate were developed. Regarding PMN-PZ-PT and PNN-PZ-PT bulk samples, a sintering temperature of 850 degrees C became possible with the addition of Li-Bi oxide. Pt-Rh/TaN was used as a barrier layer, and a 30 mu m-thick PNN-PZ-PT film prepared at 900 degrees C on a Si substrate with a Pt-Rh/TaN buffer layer exhibited epsilon(r) = 2790, E-c = 8.6 kV/cm and P-r = 5.7 mu C/cm(2).
引用
收藏
页码:5524 / 5527
页数:4
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