Understanding nonlinear dissolution rates in photoresists

被引:15
作者
Burns, SD [1 ]
Gardiner, AB [1 ]
Krukonis, VJ [1 ]
Wetmore, PM [1 ]
Lutkenhaus, J [1 ]
Schmid, GM [1 ]
Flanagin, LW [1 ]
Willson, CG [1 ]
机构
[1] Univ Texas, Dept Chem Engn, Austin, TX 78751 USA
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2 | 2001年 / 4345卷
关键词
surface inhibition; residual casting solvent; surface roughness; critical ionization dissolution model;
D O I
10.1117/12.436876
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work focuses on understanding the dissolution phenomenon of surface inhibition, which is observed often in the development of novolac based resists. Many theories have been offered to explain this phenomenon, including a concentration gradient of resist components, oxidation of the surface, formation of a gel layer, and surface roughness effects. This work focuses on theories that propose a concentration gradient in resist components. A technique has been established to separate and analyze individual layers of thin films, and the concentration gradient in many resist components (residual solvent, low molecular weight chains, photoactive compound, density) has been compared to the observed dissolution rate. The results indicate that no significant concentration gradients exist in a mum novolac film, and that these hypotheses are inadequate to explain surface inhibition. Several other theories are explored, including oxidation of the surface, surface roughness effects, etc. The critical ionization dissolution model may offer an explanation for why surface inhibition is observed in novolac, but typically not in poly(p-hydroxystyrene).
引用
收藏
页码:37 / 49
页数:13
相关论文
共 34 条
[1]  
ALLEN RD, 1995, P SOC PHOTO-OPT INS, V2438, P250, DOI 10.1117/12.210346
[2]  
Arcus R. A., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V631, P124, DOI 10.1117/12.963634
[3]  
BEAUCHEMIN BT, 1995, P SOC PHOTO-OPT INS, V2438, P261
[4]   A SENSITIVE NOVOLAC-BASED POSITIVE ELECTRON RESIST [J].
BOWDEN, MJ ;
THOMPSON, LF ;
FAHRENHOLTZ, SR ;
DOERRIES, EM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1304-1313
[5]  
BURNS SD, 2000, SURFACE PHENOMENON C
[6]  
BURNS SD, 1999, P AM CHEM SOC PMSE, V81, P81
[7]   Gel layer model for photoresist development [J].
Cho, JY ;
Choi, SJ ;
Kim, BU ;
Park, JM ;
Lee, SJ .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 :432-441
[8]  
Dammel Ralph., 1993, DIAZONAPHTHOQUINONE
[9]   THERMAL EFFECTS ON PHOTORESIST AZ1350J [J].
DILL, FH ;
SHAW, JM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) :210-218
[10]   Refractive indices in thick photoresist films as a function of bake conditions and film exposure [J].
Ficner, S ;
Dammel, RR ;
Perez, Y ;
Gardiner, A ;
Willson, CG .
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 :838-849