High-Performance n-Type Organic Thin-Film Transistors Based on Solution-Processable Perfluoroalkyl-Substituted C60 Derivatives

被引：63

作者：

Chikamatsu, Masayuki ^{[1
]}

Itakura, Atsushi ^{[1
]}

Yoshida, Yuji ^{[1
]}

Azumi, Reiko ^{[1
]}

Yase, Kiyoshi ^{[1
]}

机构：

[1] AIST, Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 24期

关键词：

D O I：

10.1021/cm802577u

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High performance n-type organic thin-film transistors (TFTs) were developed using solution-processable perfluoralkyl-substituted C60 derivatives with high electron mobility and air stability. X-ray diffraction (XRD) measurement was carried out to examine the microstructure of spin-coated films. It was observed that the spin-coated films of perfluoroalkyl substituted C 60 through the para position of phenyl group showed high crystallinity. The XRD patterns showed that the film crystallinity depend on fluoroalkyl-chain orientation and length. It was also found that the crystallinity and air-stability of the films can be improved by optimizing thin-film fabrication conditions. It was observed that the introduction of a long-chain perfluoroalkyl group to C60 can be used for fabrication of stable and high performance n-type organic TFTs.

引用

页码：7365 / 7367

页数：3

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