Air-stable ambipolar organic transistors

被引：184

作者：

Anthopoulos, Thomas D.

Anyfantis, G. C.

Papavassiliou, G. C.

de Leeuw, Dago M.

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BW, England

[2] Natl Hellen Res Fdn, Inst Theoret & Phys Chem, GR-11635 Athens, Greece

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2715028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5-dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10(-4) cm(2)/V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/n-channel molecules. (c) 2007 American Institute of Physics.

引用

页数：3

共 28 条

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