Magnetostrictive bending of an anisotropic free crystal substrate:: Analytical and numerical solutions

被引:10
作者
Farber, P
Hörmann, M
Bischoff, M
Kronmüller, H [1 ]
机构
[1] Max Planck Inst Met Forsch, D-70506 Stuttgart, Germany
[2] Inst Baustat, Stuttgart, Germany
关键词
D O I
10.1063/1.370593
中图分类号
O59 [应用物理学];
学科分类号
摘要
A model to calculate the effective elastic modulus of a single crystal cantilever used as a substrate for magnetostrictive measurements of thin films is given. Calculations are presented for Si (110), sapphire (1 (1) over bar 00) (M plane) and (1 (2) over bar 10) (A plane) cantilevers. Numerical calculations using the finite element method for sapphire show a very high accuracy of the proposed model. (C) 1999 American Institute of Physics. [S0021-8979(99)00711-2].
引用
收藏
页码:7828 / 7832
页数:5
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