Cu(In,Ga)Se2 thin film solar cells from nanoparticle precursors

被引：46

作者：

Ahn, SeJin ^{[1
]}

Kim, KiHyun ^{[2
]}

Yoon, KyungHoon ^{[1
]}

机构：

[1] Korea Inst Energy Res, Solar Cells Res Ctr, Taejon 305343, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2008年 / 8卷 / 06期

关键词：

solar cell; thin film; CIGS; nanoparticle;

D O I：

10.1016/j.cap.2007.04.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A non-vacuum process for Cu(In,Ga)Se-2 (CIGS) thin film solar cells from nanoparticle precursors was described in this work. CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials (CuI, InI3, GaI3 and Na2Se) in organic solvents. by which fine CIGS nanoparticles of about 15 nm in diameter were obtained. The nanoparticle precursors were then deposited onto Mo/glass substrate by the doctor blade technique. After heat treating the CIGS/Mo/glass layers in Se gas atmosphere, a complete solar cell structure was fabricated by depositing the other layers including CdS buffer layer, ZnO window layer and At electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：766 / 769

页数：4

共 3 条

[1] Nucleation and growth of Cu(In,Ga)Se2 nanoparticles in low temperature colloidal process [J].

Ahn, SeJin ;

Kim, KiHyun ;

Chun, YoungGab ;

Yoon, KyungHoon .

THIN SOLID FILMS, 2007, 515 (7-8) :4036-4040

[2] Diode (characteristics in state-of-the-art ZnO/CdS/Cu(In1-xGax)Se2 solar cells [J].

Contreras, MA ;

Ramanathan, K ;

AbuShama, J ;

Hasoon, F ;

Young, DL ;

Egaas, B ;

Noufi, R .

PROGRESS IN PHOTOVOLTAICS, 2005, 13 (03) :209-216

[3] Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In,Ga)Se2 solar cell materials [J].

Schulz, DL ;

Curtis, CJ ;

Flitton, RA ;

Wiesner, H ;

Keane, J ;

Matson, RJ ;

Jones, KM ;

Parilla, PA ;

Noufi, R ;

Ginley, DS .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) :433-437

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