Optical properties of excitons in CdS semiconductor-insulator quantum wires

被引:8
作者
Gavrilov, SA [1 ]
Gusev, VV
Dneprovskii, VS
Zhukov, EA
Syrnikov, AN
Yaminskii, IV
Muljarov, EA
机构
[1] Tech Univ, Moscow Inst Elect, Moscow 103498, Russia
[2] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
[3] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.568155
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The characteristic features of the luminescence spectra of CdS semiconductor nanocrystals, crystallized in hollow channels in a dielectric template, are explained in terms of excitonic transitions in semiconductor-insulator quantum wires. The excitonic transition energies agree with the values calculated taking into account the effects of size quantization and the "dielectric enhancement of excitons" - the large increase in the electron-hole attraction as a result of the difference between the permittivities of the semiconductor and insulator. The theoretically computed binding energies of excitons in CdS quantum wires with a diameter of 10 nm reach 170 meV. It is shown that the excitonic transition energy is constant for a wide range of wire diameters. (C) 1999 American Institute of Physics. [S0021-3640(99)01115-9].
引用
收藏
页码:216 / 221
页数:6
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