A new protective AlN film for organic photoconductors

被引：11

作者：

Miao, XS

Chan, YC

Pun, EYB

机构：

[1] Department of Electronic Engineering, City University of Hong Kong

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.119495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN film with high transmissivity was deposited onto organic photoconductor (OPC) surface and the surface hardness was increased by between 31.9% and 61.5%, and the surface roughness was also decreased. The electrophotographic properties of the OPC coated with AlN film were also improved, thus confirming the suitability of AlN film for enhancing the operating life of OPC. (C) 1997 American Institute of Physics.

引用

页码：184 / 186

页数：3

共 9 条

[1]

BORSENBERGER PM, 1993, ORGANIC PHOTORECEPTO, P292

[2] REACTIVE LOW-VOLTAGE ION PLATING OF ALUMINUM NITRIDE FILMS AND THEIR CHARACTERISTICS [J].