Optical properties and reactive sputtering conditions of AlN and AlSiN thin films for magneto-optical applications

被引:10
作者
Miao, XS
Chan, YC
Lee, ZY
机构
[1] City University of Hong Kong,Department of Electronic Engineering
[2] Huazhong University of Science and Technology,Department of Solid State Electronics
关键词
AlN film; AlSiN film; Kerr effect enhancement; reactive sputtering;
D O I
10.1007/s11664-997-0127-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dependence of the refractive index and film thickness of AlN and AlSiN thin films on the reactive sputtering conditions (N-2 partial pressure, total pressure, and rf sputtering power) have been studied in detail and analyzed in terms of the mechanism of reactive sputtering and the target poisoning phenomenon. On the basis of the results, the sputtering conditions of AlN and AlSiN films have been optimized for magneto-optical applications. The AlN and AlSiN films after optimization of the sputtering conditions had very high transmissivity and refractive index, and were suitable for magneto-optical Kerr effect enhancement. A marked enhancement of the magneto-optical Kerr effect for a TbFeCo film coated with AlN and AlSiN films was observed. The improvement of the signal-to-noise ratio obtained with the AlSiN film was greater than the AlN film.
引用
收藏
页码:21 / 24
页数:4
相关论文
共 9 条
[1]  
ASANO M, 1987, IEEE T MAGN, V25, P2620
[2]   THE USE OF PROCESS MODELING FOR OPTIMUM DESIGN OF REACTIVE SPUTTERING PROCESSES [J].
BERG, S ;
MORADI, M ;
NENDER, C ;
BLOM, HO .
SURFACE & COATINGS TECHNOLOGY, 1989, 39 (1-3) :465-474
[3]   REACTIVE LOW-VOLTAGE ION PLATING OF ALUMINUM NITRIDE FILMS AND THEIR CHARACTERISTICS [J].
DANH, NQ ;
MONZ, KH ;
PULKER, HK .
THIN SOLID FILMS, 1995, 257 (01) :116-124
[4]   THE INFLUENCE OF THE REACTIVE GAS-FLOW ON THE PROPERTIES OF ALN SPUTTER-DEPOSITED FILMS [J].
JANCZAKBIENK, E ;
JENSEN, H ;
SORENSEN, G .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 140 :696-701
[5]  
Katayama H., 1988, IEEE Translation Journal on Magnetics in Japan, V3, P126, DOI 10.1109/TJMJ.1988.4563658
[6]   OPTICAL-PROPERTIES OF SPUTTER-DEPOSITED ALUMINUM NITRIDE FILMS ON SILICON [J].
LEGRAND, PB ;
WAUTELET, M ;
DUGNOILLE, B ;
DAUCHOT, JP ;
HECQ, M .
THIN SOLID FILMS, 1994, 248 (02) :220-223
[7]  
MIAO XS, 1994, J INORGANIC MAT, V9, P249
[8]   LOW-TEMPERATURE GROWTH OF RF REACTIVELY PLANAR MAGNETRON-SPUTTERED ALN FILMS [J].
PENZA, M ;
DERICCARDIS, MF ;
MIRENGHI, L ;
TAGLIENTE, MA ;
VERONA, E .
THIN SOLID FILMS, 1995, 259 (02) :154-162
[9]  
YANG BC, 1994, PHYSICS TECHNOLOGY T