OPTICAL-PROPERTIES OF SPUTTER-DEPOSITED ALUMINUM NITRIDE FILMS ON SILICON

被引：17

作者：

LEGRAND, PB ^{[1
]}

WAUTELET, M ^{[1
]}

DUGNOILLE, B ^{[1
]}

DAUCHOT, JP ^{[1
]}

HECQ, M ^{[1
]}

机构：

[1] FAC POLYTECH MONS,SERV MAT,B-7000 MONS,BELGIUM

来源：

THIN SOLID FILMS | 1994年 / 248卷 / 02期

关键词：

D O I：

10.1016/0040-6090(94)90014-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of thin sputter-deposited AlN films on Si were measured. It is shown that they depend on the exact preparation conditions. In the visible range, the refractive index n of AlN is fitted by n = c1 exp(-lambda/c2) + c3, where c1 = 2.09 and c2 = 131.9 nm are constant and c3 almost-equal-to 1.8-2.5 depending on the preparation conditions. It is also shown that the chromaticity coordinates of AlN on Si vary quasi-periodically with the product of the refractive index and its thickness.

引用

页码：220 / 223

页数：4

共 20 条

[1] THE DEPENDENCE OF ALUMINUM NITRIDE FILM CRYSTALLOGRAPHY ON SPUTTERING PLASMA COMPOSITION [J].