Poly (2-trimethylsilyl-2-propyl methacrylate-co-γ-butyrolactone-2-yl methacrylate) for ArF lithography

被引：10

作者：

Kim, JB

Kim, H

Lee, SH

Moon, JT

机构：

[1] KIST, Dept Adv Mat Engn, Seoul 130650, South Korea

[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin Si, Kyungki Do, South Korea

来源：

POLYMER | 1999年 / 40卷 / 18期

关键词：

ArF lithography; chemically amplified resist; silicon-containing polymer;

D O I：

10.1016/S0032-3861(99)00028-2

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Poly(2-trimethylsilyl-2-propyl methacrylate-co-gamma-butyrolactone-2-yl methacrylate) was synthesized and evaluated as a chemically amplified resist for ArF lithography. The polymer has excellent transmittance at 248 nm and also has a good transmittance at 193 nm. in addition, the polymer possesses good thermal stability up to 200 degrees C, whereas in the presence of an acid the cleavage of the 2-trimethylsilyl-2-propyl eater group begins at about 80 degrees C in a catalytic manner. Patterns of 0.24 mu m line/space were obtained with a conventional developer, 2.38 wt.% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser exposure system. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：5213 / 5217

页数：5

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