AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

被引：2

作者：

Eremenko, V ^{[1
]}

González, L

González, Y

Vdovin, V

Vazquez, L

Aragón, G

Herrera, M

Briones, F

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

[2] CSIC, Inst Microelect Madrid, CNM, Madrid 28760, Spain

[3] Inst Chem Problems Microelect, Moscow 109017, Russia

[4] CSIC, Inst Ciencia Mat Madrid, Dept Surface Phys & Engn, Madrid 28049, Spain

[5] Univ Cadiz, Dept Ciencia Mat Ingn Met & Quim Inorgan, Cadiz 11510, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷

关键词：

surface morphology; etching; transmission electron microscopy; atomic force microscopy;

D O I：

10.1016/S0921-5107(01)01016-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An alternative way to characterise composition modulation in InxGa1-xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 degreesC by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along [110]. We propose that morphology features observed in the experiments are related to composition modulation effects. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：269 / 273

页数：5

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