SELECTIVE ETCHING AND PHOTOETCHING OF (100) GALLIUM-ARSENIDE IN CRO3-HF AQUEOUS-SOLUTIONS .1. INFLUENCE OF COMPOSITION ON ETCHING BEHAVIOR

被引：89

作者：

WEYHER, J

VANDEVEN, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 63卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90217-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：285 / 291

页数：7

共 20 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2]

CARDWELL MJ, 1974, 5TH INT S GALL ARS R

[3]

ELLIOT CR, 1978, J ELECTROCHEM SOC, V125, P621

[4] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].

GRABMAIER, JG ;

WATSON, CB .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+

[5] SELECTIVE PHOTOETCHING OF GALLIUM-ARSENIDE [J].

KUHNKUHNENFELD, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1063-+

[6] SHALLOW DEFECT ETCHING OF GAAS USING AB SOLUTION UNDER LASER ILLUMINATION [J].

MUNOZYAGUE, A ;

BAFLEUR, M .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :239-248

[7] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].

OLSEN, GH ;

ABRAHAMS, MS ;

ZAMEROWSKI, TJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656

[8] ETCH PITS IN GALLIUM ARSENIDE [J].

RICHARDS, JL ;

CROCKER, AJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) :611-612

[9]

Roman W. C., 1974, US Patent, Patent No. 3830665

[10] EFFECTS OF ILLUMINATION ON PREFERENTIAL ETCHING OF N-TYPE GAAS IN A CRO3-HF-AGNO3 SOLUTION [J].

SAITOH, T ;

MATSUBARA, S ;

MINAGAWA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :670-674

← 1 2 →