Low noise, high efficiency L-band EDFA with 980nm pumping

被引：40

作者：

Chung, HS ^{[1
]}

Lee, MS

Lee, D

Park, N

DiGiovanni, DJ

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Seoul Natl Univ, Sch EE, Opt Commun Syst Lab, Seoul 151742, South Korea

[3] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 13期

关键词：

D O I：

10.1049/el:19990750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low noise figures of 3.3-3.9dB have been acheived in flat gain L-band EDFAs over 30nm with < 1dB gain variation. A dual-stage configuration with optimised use of backward amplified spontaneous emission is employed for low noise and high efficiency operation with only 980nm pumping.

引用

页码：1099 / 1100

页数：2

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