The role of nickel in Si(001) roughening

被引：51

作者：

Ukraintsev, VA ^{[1
]}

Yates, JT ^{[1
]}

机构：

[1] UNIV PITTSBURGH,CTR SURFACE SCI,DEPT CHEM,PITTSBURGH,PA 15260

来源：

SURFACE SCIENCE | 1996年 / 346卷 / 1-3期

关键词：

Auger electron spectroscopy; low energy electron diffraction; nickel; scanning tunneling microscopy; silicon; surface detects; surface roughening;

D O I：

10.1016/0039-6028(95)00779-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The role of Ni impurities on the structure of the Si(001)-(2 x 1) surface has been investigated by statistically comparing STM patterns with Auger spectra. Characteristic reconstructed local structures (''splt off dimers'' and ''vacancy channels'') are observed for different surface concentrations of Ni as measured by Auger electron spectroscopy, and it is shown that the STM image provides a high sensitivity to Ni. For high levels of Ni contamination, long range roughening of the Si(001) surface is observed resulting in more than 50 Angstrom corrugation and loss of atomic structure as detected by the STM. Crystal support cleaning procedures and crystal annealing procedures have been devised permitting Si(001) crystals to be repeatedly heated over long time periods without undergoing surface contamination or macroscopic roughening.

引用

页码：31 / 39

页数：9

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