A 60GHz, 13dBm Fully Integrated 65mn RF-CMOS Power Amplifier

被引：3

作者：

Aloui, Sofiane ^{[1
]}

Kerherve, Eric ^{[1
]}

Belot, Didier ^{[2
]}

Plana, Robert ^{[3
]}

机构：

[1] Univ Bordeaux, UMR CNRS 5218, IMS Lab, F-33405 Talence, France

[2] STMicroelectronics, Cent R&D 1, Crolles, France

[3] Univ Toulouse 1, CNRS, LAAS, Toulouse, France

来源：

2008 JOINT IEEE NORTH-EAST WORKSHOP ON CIRCUITS AND SYSTEMS AND TAISA CONFERENCE | 2008年

关键词：

D O I：

10.1109/NEWCAS.2008.4606365

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 65nm CMOS, 60GHz fully integrated power amplifier (PA) from STMicroelectronics has been designed for low cost Wireless Personal Area Network (WPAN). It has been optimized to deliver the maximum linear output power (OCP1) without using parallel amplification topology. The simulated OCP1 is equal to 8.9 dBm with a gain of 8dB. To obtain good performances and consume an ultra compact area of silicon, the PA has been matched and optimized with a mixed technique, using lumped and distributed elements. The chip size is 0.48mm*0.6mm including pads.

引用

页码：237 / +

页数：2

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