A 2.45-GHz 0.13-μm CMOS PA with parallel amplification

被引：56

作者：

Reynaert, Patrick ^{[1
]}

Steyaert, Michiel S. J.

机构：

[1] Univ Calif Berkeley, Berkeley Wireless Res Ctr, Dept Elect Engn & Comp Sci, Berkeley, CA 94704 USA

[2] Katholieke Univ Leuven, Dept Elect Engn, ESAT, MICAS, BE-3001 Louvain, Belgium

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 03期

关键词：

CMOS; power amplifiers; power combining; power control;

D O I：

10.1109/JSSC.2006.891715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a fully integrated 0.13-mu m CMOS RF power amplifier for Bluetooth is presented. Four differential amplifiers are placed on a single chip and their outputs are combined with an on-chip LC balun structure. This technique allows to have a low impedance transformation ratio for each individual amplifier, and thus a lower power loss. The amplifier achieves a measured output power of 23 dBm at a supply voltage of 1.5 V and a drain efficiency of 35% and a global efficiency of 29%. The parallel amplification topology allows to efficiently control the output power which results in an efficiency improvement when the output power is reduced.

引用

页码：551 / 562

页数：12

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