Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

被引:262
作者
Aoki, I [1 ]
Kee, SD [1 ]
Rutledge, DB [1 ]
Hajimiri, A [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
circular geometry; CMOS analog integrated circuit; distributed active transformer; double differential; harmonic control; impedance transformation; low voltage; power amplifier; power combining;
D O I
10.1109/4.987090
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel on-chip impedance matching and power-combining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50-Omega match. It also uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any off-chip component, such as tuned bonding wires or external inductors. Furthermore, it desensitizes the operation of the amplifier to the inductance of bonding wires making the design more reproducible. To demonstrate the feasibility of this concept, a 2.4-GHz 2-W 2-V truly fully integrated power amplifier with 50-Omega input and output matching has been fabricated using 035-mum CMOS transistors. It achieves a power added efficiency (PAE) of 41 % at this power level. It can also produce 450 mW using a 1-V supply. Harmonic suppression is 64 dBc or better. This new topology makes possible a truly fully integrated watt-level gigahertz range low-voltage CMOS power amplifier for the first time.
引用
收藏
页码:371 / 383
页数:13
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