Monolithic transformers for silicon RF IC design

被引：605

作者：

Long, JR ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 09期

基金：

加拿大自然科学与工程研究理事会;

关键词：

baluns; monolithic transformers and inductors; radio frequency integrated circuit design; silicon technology; transformer; circuit models; wireless circuits;

D O I：

10.1109/4.868049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented, Two types of transformer construction are considered in detail, and the characteristics of two-port (1:1 and 1: n turns ratio) and multiport transformers (i.e., baluns) are presented from both computer simulation and experimental measurements. The effects of parasitics and imperfect coupling between transformer windings are outlined from the circuit point of view, Resonant tuning is shown to reduce the losses between input and output at the expense of operating bandwidth, A procedure for estimating the size of a monolithic transformer to meet a given specification is outlined, and circuit examples are used to illustrate the applications of the monolithic transformer in RF ICs.

引用

页码：1368 / 1382

页数：15

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