Monolithic transformers for silicon RF IC design

被引：18

作者：

Cheung, DTS ^{[1
]}

Long, JR ^{[1
]}

Hadaway, RA ^{[1
]}

Harame, DL ^{[1
]}

机构：

[1] Univ Toronto, Toronto, ON M5S 3G4, Canada

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application.

引用

页码：105 / 108

页数：4

共 4 条

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[2]

FRLAN E, 1989, P IEEE MTT S JUN, P661

[3] The modeling, characterization, and design of monolithic inductors for silicon RF IC's [J].

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (03) :357-369

[4]

RABJOHN GG, 1991, THESIS CARLETON U

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