RF circuit design aspects of spiral inductors on silicon

被引：131

作者：

Burghartz, JN ^{[1
]}

Edelstein, DC ^{[1
]}

Soyuer, M ^{[1
]}

Ainspan, HA ^{[1
]}

Jenkins, KA ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1998年 / 33卷 / 12期

关键词：

D O I：

10.1109/4.735544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q on the performance of radiofrequency (RF) building blocks are discussed. Integrated spiral inductors with inductances of 0.5-100 nW and Q's up to 40 are shown to be feasible in very-large-scale-integration silicon technology, Circuit design aspects, such as a minimum inductor area, the cross talk between inductors, and the effect of a substrate contact on the inductor characteristics are addressed, Important RF building blocks, such as a bandpass filter, low-noise amplifier, and voltage-controlled oscillator are shown to benefit substantially from an improved inductor-Q.

引用

页码：2028 / 2034

页数：7

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