Integrated RF and microwave components in BiCMOS technology

被引：56

作者：

Burghartz, JN

Soyuer, M

Jenkins, KA

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 09期

关键词：

D O I：

10.1109/16.535350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents and discusses an approach to exploit conventional BiCMOS technology for monolithic integration of rf & microwave systems. Several components, which are important elements of rf & microwave circuit design and which are not available in current BiCMOS, are described and characterized. The results for integrated spiral inductors in particular show that obvious limitations in comparison to compound semiconductor technology or hybrid configurations can be overcome to a large extent by utilizing the structural design options given with VLSI silicon integration technology.

引用

页码：1559 / 1570

页数：12

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