A 1-V CMOS power amplifier for Bluetooth applications

被引：33

作者：

Ho, KW ^{[1
]}

Luong, HC ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2003年 / 50卷 / 08期

关键词：

Bluetooth; CMOS; class E; high efficiency; low voltage; power amplifier;

D O I：

10.1109/TCSII.2003.814803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-stage power amplifier operated at 2.4 GHz is designed and fabricated in a standard 0.35-mum CMOS technology. A common-gate class-E power amplifier is employed for low-supply voltage operation without degrading the power-added efficiency (PAE). A preamplifter with positive feedback configuration is used to drive the common-gate output stage. The amplifier delivers 18-dB output power with 33% PAE under a 1-V supply voltage.

引用

页码：445 / 449

页数：5

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