CMOS wireless phase-shifted transmitter

被引：29

作者：

Hamedi-Hagh, S ^{[1
]}

Salama, CAT ^{[1
]}

机构：

[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 08期

基金：

加拿大自然科学与工程研究理事会;

关键词：

class-F power amplifier; CMOS; outphasing; phase-shifted (PS) transmitter; wireless;

D O I：

10.1109/JSSC.2004.831786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated phase-shifted (PS) transmitter is presented in this paper. The PS transmitter employs switching power amplifiers, operates without mixers, and provides an inter-modulation distortion-free output spectrum, making it a suitable choice for mobile communication systems. The RF blocks of the PS transmitter include a local oscillator, phase shifters, and switching class-F power amplifiers with wide-band matching networks. The PS transmitter is implemented in a standard single-polysilicon, six-metal 0.18-mum CMOS technology, and occupies an area of 3 mm(2). It operates from a 1-V supply and provides better than 42 dBc adjacent channel power ratio with an output bandwidth of 50 MHz at 8 GHz. The PS transmitter RF front-end provides 22 dBm of average output power with a 38% average power added efficiency.

引用

页码：1241 / 1252

页数：12

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