Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking

被引:130
作者
Liu, JM [1 ]
Chen, HF [1 ]
Meng, XJ [1 ]
Simpson, TB [1 ]
机构
[1] JAYCOR,SAN DIEGO,CA 92186
关键词
injection-locked oscillators; modulation bandwidth; noise; optical bistability; semiconductor lasers;
D O I
10.1109/68.623251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Operating conditions for modulation bandwidth enhancement, noise reduction, and stable locking to be simultaneously fulfilled in a semiconductor laser subject to strong optical injection are investigated. When the strength of the injection signal is fixed, the optimum detuning of the injection frequency exists as a tradeoff between bandwidth enhancement and noise reduction. When the laser is injection-locked at a given value of frequency detuning in the stable locking region, both bandwidth enhancement and noise reduction are improved as the injection parameter is increased over a vc ide range.
引用
收藏
页码:1325 / 1327
页数:3
相关论文
共 6 条
[1]   INJECTION LOCKING IN DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS [J].
HUI, RQ ;
DOTTAVI, A ;
MECOZZI, A ;
SPANO, P .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1688-1695
[2]  
LIU JM, 1994, IEEE J QUANTUM ELECT, V30, P957
[3]   LOCKING CONDITIONS AND STABILITY PROPERTIES FOR A SEMICONDUCTOR-LASER WITH EXTERNAL LIGHT INJECTION [J].
MOGENSEN, F ;
OLESEN, H ;
JACOBSEN, G .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (07) :784-793
[4]   BANDWIDTH ENHANCEMENT AND BROAD-BAND NOISE-REDUCTION IN INJECTION-LOCKED SEMICONDUCTOR-LASERS [J].
SIMPSON, TB ;
LIU, JM .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (07) :709-711
[5]   Small-signal analysis of modulation characteristics in a semiconductor laser subject to strong optical injection [J].
Simpson, TB ;
Liu, JM ;
Gavreilides, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (08) :1456-1468
[6]   PERIOD-DOUBLING CASCADES AND CHAOS IN A SEMICONDUCTOR-LASER WITH OPTICAL-INJECTION [J].
SIMPSON, TB ;
LIU, JM ;
GAVRIELIDES, A ;
KOVANIS, V ;
ALSING, PM .
PHYSICAL REVIEW A, 1995, 51 (05) :4181-4185