BANDWIDTH ENHANCEMENT AND BROAD-BAND NOISE-REDUCTION IN INJECTION-LOCKED SEMICONDUCTOR-LASERS

被引：168

作者：

SIMPSON, TB

LIU, JM

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

[2] USAF,PHILLIPS LAB,CTR NONLINEAR OPT,KIRTLAND AFB,NM 87117

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 07期

关键词：

D O I：

10.1109/68.393181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Injection locking of a semiconductor laser can significantly improve the broadband modulation characteristics. By adjusting the frequency offset between the master laser and the slave laser, improved modulation bandwidth or flatness of the modulation response can be emphasized. The improved modulation characteristics are accompanied by reduced broad-band relative intensity noise, Our calculations predict that the parasitic-free modulation bandwidths can be enhanced above the theoretical limit for the free-running laser.

引用

收藏

页码：709 / 711

页数：3

相关论文

共 15 条

[1] CONTRIBUTION OF SPONTANEOUS EMISSION TO THE LINEWIDTH OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER [J].

GALLION, P ;

NAKAJIMA, H ;

DEBARGE, G ;

CHABRAN, C .

ELECTRONICS LETTERS, 1985, 21 (14) :626-628

[2] INJECTION LOCKING PROPERTIES OF A SEMICONDUCTOR-LASER [J].

LANG, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) :976-983

[3] LOCKING RANGE, PHASE NOISE AND POWER SPECTRUM OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER [J].

LIDOYNE, O ;

GALLION, P ;

CHABRAN, C ;

DEBARGE, G .

IEE PROCEEDINGS-J OPTOELECTRONICS, 1990, 137 (03) :147-154

[4]

LIU JM, 1994, IEEE J QUANTUM ELECT, V30, P957

[5] LOCKING CONDITIONS AND STABILITY PROPERTIES FOR A SEMICONDUCTOR-LASER WITH EXTERNAL LIGHT INJECTION [J].

MOGENSEN, F ;

OLESEN, H ;

JACOBSEN, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (07) :784-793

[6] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].

OLSHANSKY, R ;

HILL, P ;

LANZISERA, V ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418

[7] LOCKING BANDWIDTH AND RELAXATION OSCILLATIONS OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER [J].

PETITBON, I ;

GALLION, P ;

DEBARGE, G ;

CHABRAN, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :148-154

[8] SMALL-SIGNAL ANALYSIS OF FREQUENCY CHIRPING IN INJECTION-LOCKED SEMICONDUCTORS LASERS [J].

PIAZZOLLA, S ;

SPANO, P ;

TAMBURRINI, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (12) :2219-2223

[9] CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS [J].

RALSTON, JD ;

WEISSER, S ;

ESQUIVIAS, I ;

LARKINS, EC ;

ROSENZWEIG, J ;

TASKER, PJ ;

FLEISSNER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1648-1659

[10] INTENSITY INSTABILITIES OF SEMICONDUCTOR-LASERS UNDER CURRENT MODULATION, EXTERNAL LIGHT INJECTION, AND DELAYED FEEDBACK [J].

SACHER, J ;

BAUMS, D ;

PANKNIN, P ;

ELSASSER, W ;

GOBEL, EO .

PHYSICAL REVIEW A, 1992, 45 (03) :1893-1905