LOCKING RANGE, PHASE NOISE AND POWER SPECTRUM OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：40

作者：

LIDOYNE, O

GALLION, P

CHABRAN, C

DEBARGE, G

机构：

[1] Ecole Natl Superieure des, Telecommunications

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 03期

关键词：

30;

D O I：

10.1049/ip-j.1990.0026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The locking range of an optically injected semiconductor laser is discussed, including the spectral hole burning and lateral carrier diffusion effects. These effects are modelled with a gain suppression coefficient. In addition, an expression for the mean square phase jitter of an injection-locked semiconductor laser is derived when these effects are insignificant. The power spectrum of a locked laser is obtained and compared with experimental results.

引用

收藏

页码：147 / 154

页数：8

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