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LOCKING BANDWIDTH AND RELAXATION OSCILLATIONS OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER

被引：181
作者：
PETITBON, I
GALLION, P
DEBARGE, G
CHABRAN, C
机构：
[1] Ecole Natl Superieure des, Telecommunications, Paris, Fr, Ecole Natl Superieure des Telecommunications, Paris, Fr
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 02期
关键词：
COHERENT OPTICAL COMMUNICATIONS - INJECTION-LOCKED SEMICONDUCTOR LASER - LOCKING BANDWIDTH - RELAXATION OSCILLATIONS;
D O I：
10.1109/3.108
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Theoretical and experimental results for an injection-locked semiconductor laser are reported. The measured position and size of the locking bandwidth compare favorably to those calculated using the authors' model of the injected laser. The effect of synchronization on the intensity level is pointed out. The usefulness of the technique in terms of modulation is estimated based on the behavior, amplitude, and frequency of the relaxation oscillations which are the main limiting factor.
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页码：148 / 154
页数：7
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