Bottom electrode structures of Pt/RuO2/Ru on polycrystalline silicon for low temperature (Ba,Sr)TiO3 thin film deposition

被引：16

作者：

Choi, ES ^{[1
]}

Lee, JC ^{[1
]}

Hwang, JS ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 9B期

关键词：

barrier layer; RuO2/Ru; MOCVD; specific contact resistance; low temperature BST deposition;

D O I：

10.1143/JJAP.38.5317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrode structures of Pt/RuO2/Ru on polysilicon and (Ba,Sr)TiO3(BST) thin films on Pt/RuO2/Ru/poly-Si structures were prepared by metal-organic chemical vapor deposition (MOCVD). The barrier layers of RuO2/Ru deposited by MOCVD showed a stable interface and did not affect the surface morphology of the platinum bottom electrode even at a high annealing temperature of 800 degrees C in oxygen ambient. Contacts in the annealed state up to 800 degrees C exhibited linear current-voltage characteristics with a constant specific contact resistance of 5.0 x 10(-5) Omega.cm(2). The excellent leakage current characteristics and dielectric properties of 50-nm-thick BST films were due to the stable and smooth morphologies of the bottom electrodes at BST deposition temperature.

引用

页码：5317 / 5321

页数：5

共 8 条

[1] Preparation and characterization of iridium oxide thin films grown by DC reactive sputtering [J].