Enabling gate dielectric design for all solution-processed, high-performance, flexible organic thin-film transistors

被引：115

作者：

Liu, P

Wu, YL

Li, YN

Ong, BS ^{[1
]}

Zhu, SP

机构：

[1] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON, Canada

[2] McMaster Univ, Dept Chem Engn, Hamilton, ON, Canada

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 14期

关键词：

D O I：

10.1021/ja060620l

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel solution-processed, compositionally and structurally stable dual-layer gate dielectric composed of a UV-cured poly(4-vinyl phenol)-co-poly(methyl methacrylate) bottom layer and a thermally cross-linked poly(methyl silsesquioxane) top layer for organic thin-film transistors is described. This gate dielectric design, coupled with compatible solution-processable semiconductor and conductor materials, has enabled fabrication of all solution-processed, high-performance organic thin-film transistors on flexible substrates. High field-effect mobility and current on/off ratio, together with other desirable transistor properties, are demonstrated. Copyright © 2006 American Chemical Society.

引用

收藏

页码：4554 / 4555

页数：2

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