Surface charging and impulsive ion ejection during ultrashort pulsed laser ablation

被引:234
作者
Stoian, R
Rosenfeld, A
Ashkenasi, D
Hertel, IV
Bulgakova, NM
Campbell, EEB
机构
[1] Max Born Inst Nichtlineare Opt & Kurzzeitspekt, D-12489 Berlin, Germany
[2] Natl Inst Laser Plasma & Radiat Phys, Bucharest 76900, Romania
[3] SB RAS, Inst Thermophys, Novosibirsk 630090, Russia
[4] Univ Gothenburg, Dept Expt Phys, SE-41296 Gothenburg, Sweden
[5] Chalmers Univ Technol, SE-41296 Gothenburg, Sweden
关键词
D O I
10.1103/PhysRevLett.88.097603
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report time-resolved studies using femtosecond laser pulses, accompanied by model calculations, that illuminate the difference in the dynamics of ultrashort pulsed laser ablation of different materials. Dielectrics are strongly charged at the surface on the femtosecond time scale and undergo an impulsive Coulomb explosion. This is not seen from metals and semiconductors where the surface charge is effectively quenched.
引用
收藏
页码:976031 / 976034
页数:4
相关论文
共 19 条
[1]   Emission of prompt electrons during excimer laser ablation of aluminum targets [J].
Amoruso, S ;
Armenante, M ;
Bruzzese, R ;
Spinelli, N ;
Velotta, R ;
Wang, X .
APPLIED PHYSICS LETTERS, 1999, 75 (01) :7-9
[2]   Single and multiple ultrashort laser pulse ablation threshold of Al2O3 (corundum) at different etch phases [J].
Ashkenasi, D ;
Stoian, R ;
Rosenfeld, A .
APPLIED SURFACE SCIENCE, 2000, 154 :40-46
[3]   Laser processing of sapphire with picosecond and sub-picosecond pulses [J].
Ashkenasi, D ;
Rosenfeld, A ;
Varel, H ;
Wahmer, M ;
Campbell, EEB .
APPLIED SURFACE SCIENCE, 1997, 120 (1-2) :65-80
[4]   SPACE-TIME OBSERVATION OF AN ELECTRON-GAS IN SIO2 [J].
AUDEBERT, P ;
DAGUZAN, P ;
DOSSANTOS, A ;
GAUTHIR, JC ;
GEINDRE, JP ;
GUIZARD, S ;
HAMONIAUX, G ;
KRASTEV, K ;
MARTIN, P ;
PETITE, G ;
ANTONETTI, A .
PHYSICAL REVIEW LETTERS, 1994, 73 (14) :1990-1993
[5]  
BAUERLE D, 2000, LASER PROCESSING CHE, pCH13
[6]   2-PHOTON PHOTOEMISSION FROM METALS INDUCED BY PICOSECOND LASER-PULSES [J].
BECHTEL, JH ;
SMITH, WL ;
BLOEMBERGEN, N .
PHYSICAL REVIEW B, 1977, 15 (10) :4557-4563
[7]   DIRECT OBSERVATION OF MULTIPLE-PHOTON ABSORPTION BY FREE-ELECTRONS IN A WIDE BAND-GAP INSULATOR UNDER STRONG LASER IRRADIATION [J].
DAGUZAN, P ;
GUIZARD, S ;
KRASTEV, K ;
MARTIN, P ;
PETITE, G ;
DOSSANTOS, A ;
ANTONETTI, A .
PHYSICAL REVIEW LETTERS, 1994, 73 (17) :2352-2355
[8]   GENERATION, TRANSPORT, AND TRAPPING OF EXCESS CHARGE-CARRIERS IN CZOCHRALSKI-GROWN SAPPHIRE [J].
HUGHES, RC .
PHYSICAL REVIEW B, 1979, 19 (10) :5318-5328
[9]   PREBREAKDOWN ENERGY-ABSORPTION FROM INTENSE LASER-PULSES AT 532 NM IN NACL [J].
JONES, SC ;
FISCHER, AH ;
BRAUNLICH, P ;
KELLY, P .
PHYSICAL REVIEW B, 1988, 37 (02) :755-770
[10]   3-PHOTON PHOTOELECTRIC EFFECT IN GOLD [J].
LOGOTHET.EM ;
HARTMAN, PL .
PHYSICAL REVIEW LETTERS, 1967, 18 (15) :581-&