Passivation of Mn acceptors in GaMnAs

被引：32

作者：

Brandt, MS

Goennenwein, STB

Wassner, TA

Kohl, F

Lehner, A

Huebl, H

Graf, T

Stutzmann, M

Koeder, A

Schoch, W

Waag, A

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 13期

关键词：

D O I：

10.1063/1.1690470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (approximate to10(21) cm(-3)) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform-infrared absorption measurements show the As-H and As-D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs. (C) 2004 American Institute of Physics.

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页码：2277 / 2279

页数：3

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