A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM

被引：29

作者：

Han, Jin-Woo ^{[1
]}

Ryu, Seong-Wan ^{[1
]}

Kim, Chungjin ^{[1
]}

Kim, Sungho ^{[1
]}

Im, Maesoon ^{[1
]}

Choi, Sung Jin ^{[1
]}

Kim, Jin Soo ^{[2
]}

Kim, Kwang Hee ^{[2
]}

Lee, Gi Sung ^{[2
]}

Oh, Jae Sub ^{[2
]}

Song, Myeong Ho ^{[2
]}

Park, Yun Chang ^{[2
]}

Kim, Jeoung Woo ^{[2
]}

Choi, Yang-Kyu ^{[1
,2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Div EE, Sch EECS, Taejon 305701, South Korea

[2] Natl Nanofab Ctr, Daejeon 305806, South Korea

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel partially-depleted (PD) SONOS FinFET is demonstrated for unified function of a high speed capacitorless 1T-DRAM and non-volatile memory (NVM). A floating body and O/N/O layer are combined in a single FinFET to provide multi-functional unified-RAM (URAM) operation. The fabricated URAM shows a V-T window of 3V with a retention time exceeding 10 years for NVM operation and a sensing margin of 9 mu A with a program/erase time of 10nsec for 1T-DRAM operation in a single memory cell transistor.

引用

页码：929 / +

页数：3