Observation of built-in electric field in InP self-assembled quantum dot systems

被引：18

作者：

Davydov, V ^{[1
]}

Ignatiev, I ^{[1
]}

Ren, HW ^{[1
]}

Sugou, S ^{[1
]}

Masumoto, Y ^{[1
]}

机构：

[1] Tsukuba Res Consortium, JST, ERATO, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 20期

关键词：

D O I：

10.1063/1.123993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong Franz-Keldysh oscillations were observed in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots. These oscillations manifest a built-in electric field of about 30 kV/cm. We propose that this field originates from electric charge captured by the intrinsic defects on the dot interface. The presence of acceptor-like intrinsic defect states is found to be a general feature of the InP/InGaP interface but was not observed in other structures with quantum dots such as InAs/GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)02920-4].

引用

页码：3002 / 3004

页数：3

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