A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation

被引：15

作者：

Kanemitsu, Y

Tanaka, H

Kushida, T

Min, KS

Atwater, HA

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

[2] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.370960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied photoluminescence (PL) properties of Ga+ and As+ implanted SiO2 films on Si substrate. After thermal annealing, zinc blende GaAs nanocrystals are formed in SiO2 films and several PL bands appear in the red and near-infrared spectral region. Defects and impurities in GaAs nanocrystals and SiO2 cause weak luminescence in the near-infrared spectral region at low temperatures. After low-energy deuterium implantation, the defect PL intensity decreases and the red PL from GaAs nanocrystals is clearly observed. It is demonstrated that GaAs/SiO2 nanocompostites with low defect density are fabricated by sequential ion implantation followed by thermal annealing and hydrogen passivation. (C) 1999 American Institute of Physics. [S0021-8979(99)00215-7].

引用

页码：1762 / 1764

页数：3

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