When scaling down the MOS technology, the increasing local mechanical stress induced during the Ti- and Co/Ti silicidation can exceed the critical shear stress on the {111}< 110 > active glide system in the silicon substrate. This results in the heterogeneous nucleation of 60 degrees dislocations in the silicon substrate underneath the silicide line. In the case of an undoped silicon substrate, these dislocations nucleate at the edge of the silicide lines and are parallel with the [110] oriented line edger This paper will investigate the effects of As and BF2 junction implantation and implantation defects on the stress developed during the silicidation reaction and on the nucleation and growth of the stress induced 60 degrees dislocations in the silicon.
