Field programmable spin-logic based on magnetic tunnelling elements

被引：35

作者：

Richter, R

Boeve, H

Bär, L

Bangert, J

Klostermann, UK

Wecker, J

Reiss, G

机构：

[1] Siemens AG, Corp Technol, Dept CT MMI, D-91052 Erlangen, Germany

[2] Univ Bielefeld, Fac Phys, D-33501 Bielefeld, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 240卷 / 1-3期

关键词：

reprogrammable magnetic logic; magnetoresistance-thin films; tunnelling; Stoner-wohlfarth model;

D O I：

10.1016/S0304-8853(01)00733-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-dependent tunnelling elements are widely studied due to their possible application in electronic devices. Here we focus on field programmable logic devices. We introduce the concepts and demonstrate experimentally the functionality of reprogrammable logic gates based on spin-dependent tunnelling elements. We further extend this demonstration to logic gates consisting of micron-sized tunnelling elements. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：127 / 129

页数：3

共 7 条

[1] Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions [J].