Two-dimensional magnetic switching of micron-size films in magnetic tunnel junctions

被引：55

作者：

Anguelouch, A ^{[1
]}

Schrag, BD

Xiao, G

Lu, Y

Trouilloud, PL

Wanner, RA

Gallagher, WJ

Parkin, SSP

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.125838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetic switching behavior of micron-size magnetic tunnel junctions has been studied in two-dimensional magnetic fields. By measuring junction resistance, we obtain information about the magnetization state of the free ferromagnetic layer. Magnetic properties of this layer are explored using the Stoner-Wohlfarth rotational model as a starting point. We use geometric parameters of the critical curves to obtain information about interlayer coupling and domain structure effects in the free layer. (C) 2000 American Institute of Physics. [S0003-6951(00)00304-1].

引用

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页码：622 / 624

页数：3

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