Exchange-biased magnetic tunnel junctions: Dependence of offset field on junction width

被引：37

作者：

Moon, KS ^{[1
]}

Fontana, RE ^{[1
]}

Parkin, SSP ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期

关键词：

D O I：

10.1063/1.123222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junction structures comprising a ferromagnetic layer pinned by exchange biasing and a "free" ferromagnetic layer were prepared using dc-magnetron sputtering and patterned with conventional optical lithography. Structures were prepared, square and rectangular in shape, with various widths and lengths. It was observed that the magnetic properties of the free layer vary systematically with the size of the junction. In particular, the offset field of the free-layer magnetic hysteresis loop, as measured resistively, is controlled by a combination of magnetostatic and ferromagnetic coupling between the pinned and free layers. (c) 1999 American Institute of Physics. [S0003-6951(99)00724-X].

引用

页码：3690 / 3692

页数：3

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