Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors

被引：230

作者：

Gao, Peng ^{[1
]}

Beckmann, Dirk ^{[1
]}

Tsao, Hoi Nok ^{[1
]}

Feng, Xinliang ^{[1
]}

Enkelmann, Volker ^{[1
]}

Baumgarten, Martin ^{[1
]}

Pisula, Wojciech ^{[1
]}

Muellen, Klaus ^{[1
]}

机构：

[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 02期

关键词：

THIN-FILM TRANSISTORS; ELECTROCHEMICAL PROPERTIES; PENTACENE; MOBILITY; ANTHRADITHIOPHENES; OLIGOTHIOPHENES; HETEROACENES; THIOPHENE; TRANSPORT; ACENES;

D O I：

10.1002/adma.200802031

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The facile synthesis of a new five-ring-fused pentacene analog with four symmetrically fused thiophene ring units (Dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene, C-n-DTBDT) is presented. After aligning this material from solution, thin films for organic field-effect transistors were obtained, resulting in excellent hole mobilities of up to 1.7 cm(2) V-1 s(-1), and on/off ratio of 10(7).

引用

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页码：213 / +

页数：5

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