Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCl4

被引：10

作者：

Hong, KS

Pavlidis, D

机构：

[1] Solid-State Electronics Laboratory, Dept. of Elec. Eng. and Comp. Sci., University of Michigan, Ann Arbor

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 03期

关键词：

CCl4; carbon doped; InGaAs; metalorganic chemical vapor deposition (MOCVD); thermal annealing;

D O I：

10.1007/BF02666619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of heavily carbon dopedp-InGaAs (similar to 6.5x10(19)cm(-3)) lattice-matched to InP is reported. Growth is achieved by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using all methyl metalorganic sources and liquid CCl4. The impact of growth temperature and CCl4 flow rates on growth rate reduction and alloy compositional change was investigated. Post-growth isothermal and isochronal annealing experiments were performed on the carbon doped InGaAs layers and a quantitative analysis of carrier activation is presented using Hall and secondary ion mass spectroscopy measurements. Reduced self-compensation by carbon displacement from indium to arsenic site, as well as, reduced hydrogen passivation are suggested as possible mechanisms responsible for carrier activation upon thermal annealing.

引用

页码：449 / 455

页数：7

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