Structural characterisation of ultra-high vacuum sublimated polycrystalline thin films of hexathiophene

被引:6
作者
Campione, M
Sassella, A
Moret, M
Thierry, A
Lotz, B
机构
[1] Univ Milan, Dept Mat Sci, I-20125 Milan, Italy
[2] CNRS, Inst Charles Sadron, F-67083 Strasbourg, France
关键词
atomic force microscopy (AFM); electron diffraction; organic semiconductors; structural properties;
D O I
10.1016/j.tsf.2005.11.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hexathiophene occupies a place of relevance in the context of organic semiconductors employed as active layers in opto-electronic devices. The knowledge of the structure of this class of materials in the film-phase is crucial for understanding and tailoring the performances of these devices. Here, thin films of hexathiophene have been deposited on silica by organic molecular beam deposition under controlled growth conditions. The structure of these films has been investigated by transmission electron diffraction compelling evidences of the presence of a structure different from the bulk phase. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:169 / 173
页数:5
相关论文
共 19 条
[1]  
BISCARINI F, 1998, SCANNING PROBE MICRO, P163
[2]   Thickness measurements by quartz microbalance during thin-film growth by organic-molecular-beam deposition [J].
Campione, M ;
Cartotti, M ;
Pinotti, E ;
Sassella, A ;
Borghesi, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03) :482-486
[3]   Spatially correlated charge transport in organic thin film transistors [J].
Dinelli, F ;
Murgia, M ;
Levy, P ;
Cavallini, M ;
Biscarini, F ;
de Leeuw, DM .
PHYSICAL REVIEW LETTERS, 2004, 92 (11) :116802-1
[4]   Epitaxial growth of para-hexaphenyl on GaAs (001)-2 x 4 [J].
Erlacher, K ;
Resel, R ;
Hampel, S ;
Kuhlmann, T ;
Lischka, K ;
Müller, B ;
Thierry, A ;
Lotz, B ;
Leising, G .
SURFACE SCIENCE, 1999, 437 (1-2) :191-197
[5]   Structural order in conjugated oligothiophenes and its implications on opto-electronic devices [J].
Fichou, D .
JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (03) :571-588
[6]   Bias-induced threshold voltages shifts in thin-film organic transistors [J].
Gomes, HL ;
Stallinga, P ;
Dinelli, F ;
Murgia, M ;
Biscarini, F ;
de Leeuw, DM ;
Muck, T ;
Geurts, J ;
Molenkamp, LW ;
Wagner, V .
APPLIED PHYSICS LETTERS, 2004, 84 (16) :3184-3186
[7]   Tunneling current in polycrystalline organic thin-film transistors [J].
Horowitz, G .
ADVANCED FUNCTIONAL MATERIALS, 2003, 13 (01) :53-60
[8]   GROWTH AND CHARACTERIZATION OF SEXITHIOPHENE SINGLE-CRYSTALS [J].
HOROWITZ, G ;
BACHET, B ;
YASSAR, A ;
LANG, P ;
DEMANZE, F ;
FAVE, JL ;
GARNIER, F .
CHEMISTRY OF MATERIALS, 1995, 7 (07) :1337-1341
[9]   Field-effect transistor made with a sexithiophene single crystal [J].
Horowitz, G ;
Garnier, F ;
Yassar, A ;
Hajlaoui, R ;
Kouki, F .
ADVANCED MATERIALS, 1996, 8 (01) :52-&
[10]   Physical vapor growth of centimeter-sized crystals of α-hexathiophene [J].
Kloc, C ;
Simpkins, PG ;
Siegrist, T ;
Laudise, RA .
JOURNAL OF CRYSTAL GROWTH, 1997, 182 (3-4) :416-427