Properties of copper films prepared by chemical vapor deposition for advanced metallization of microelectronic devices

被引:43
作者
Kröger, R
Eizenberg, M
Cong, D
Yoshida, N
Chen, LY
Ramaswami, S
Carl, D
机构
[1] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
[2] Appl Mat Inc, Santa Clara, CA 95054 USA
关键词
D O I
10.1149/1.1392462
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Nucleation and growth of Cu by chemical vapor deposition (CVD) using hexafluoracetylacetonato-Cu(I)-trimethylvinylsilane [hfac(Cu)tmvs] on different physical vapor deposition (PVD) diffusion barriers, namely, tantalum (Ta) and tantalum nitride (TaNx with x < 0.5). were studied by means of scanning and transmission electron microscopy to understand the dependence of morphology and microstructure on deposition parameters. X-ray diffraction measurements were carried out to study the orientation of the polycrystalline films. Atomic force microscopy was used to investigate the surface roughness. The results were compared to sheet resistance and reflectivity measurements. Nucleation on ban Ta and TaNx surfaces is significantly more difficult than on Ta with a 200 Angstrom PVD Cu "flash" layer. The films directly deposited on Ta or TaNx show a random orientation and an amorphous interlayer between the CVD Cu film and the barrier. CVD Cu films grown on a PVD Cu ''flash" layer expose a highly preferred [111] orientation of the grains and no amorphous interlayer. (C) 1999 The Electrochemical Society. S0013-4651(98)10-080-0. All rights reserved.
引用
收藏
页码:3248 / 3254
页数:7
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